switches - chip 4 4 - 14 for price, delivery, and to place orders, please contact hittite microwave corporation: 20 alpha road, chelmsford, ma 01824 phone: 978-250-3343 fax: 978-250-3373 order on-line at www.hittite.com HMC322 general description features functional diagram the HMC322 is a broadband non-re ective gaas mesfet sp8t switch chip. covering dc to 10 ghz, this switch offers high isolation and low insertion loss and extends the frequency coverage of hittites sp8t switch product line. this switch also includes an on board binary decoder circuit which reduces the required logic control lines to three. the switch operates using a negative control voltage of 0/-5v, and requires a xed bias of -5v. all data is tested with the chip in a 50 ohm test xture connected via 0.025 mm (1 mil) diameter wire bonds of 0.5 mm (20 mils) length. broadband performance: dc - 10.0 ghz high isolation: >38 db@ 4 ghz low insertion loss: 2.0 db@ 4 ghz integrated 3:8 ttl decoder small size: 1.45 x 1.6 x 0.10 mm electrical speci cations, t a = +25 c, with 0/-5v control, vee= -5v, 50 ohm system typical applications the HMC322 is ideal for: ? telecom infrastructure ? microwave radio & vsat ? military & space ? test instrumentation parameter frequency min. typ. max. units insertion loss dc - 2.0 ghz dc - 4.0 ghz dc - 6.0 ghz dc - 8 ghz dc - 10.0 ghz 1. 9 2.0 2.1 2.2 2.4 2.3 2.4 2.5 2.6 2.8 db db db db db isolation (rfc to rf1 - 8) dc - 2.0 ghz dc - 4.0 ghz dc - 6.0 ghz dc - 8 ghz dc - 10.0 ghz 40 32 27 20 18 46 38 32 26 24 db db db db db return loss on state dc - 10.0 ghz 14 db return loss off state dc - 10.0 ghz 11 db input power for 1 db compression 0.5 - 10.0 ghz 19 23 dbm input third order intercept (two-tone input power = +7 dbm each tone) 0.5 - 10.0 ghz 34 38 dbm switching characteristics trise, tfall (10/90% rf) ton, toff (50% ctl to 10/90% rf) dc - 10.0 ghz 50 150 ns ns gaas mmic sp8t non-reflective switch, dc - 10 ghz v01.0907
switches - chip 4 4 - 15 for price, delivery, and to place orders, please contact hittite microwave corporation: 20 alpha road, chelmsford, ma 01824 phone: 978-250-3343 fax: 978-250-3373 order on-line at www.hittite.com input third order intercept point return loss 0.1 and 1 db input compression point insertion loss vs. temperature isolation between rfc and output ports -5 -4 -3 -2 -1 0 012345678910 +25 c +85 c -55 c insertion loss (db) frequency (ghz) -70 -60 -50 -40 -30 -20 -10 0 012345678910 rf1 rf2 rf3 rf4 rf5 rf6 rf7 rf8 isolation (db) frequency (ghz) -25 -20 -15 -10 -5 0 012345678910 rfc rf1-8 on rf1-8 off return loss (db) frequency (ghz) 25 30 35 40 45 50 12345678910 +25 c +85 c -55 c third order intercept (dbm) frequency (ghz) 18 20 22 24 26 28 12345678910 1.0 compression point 0.1db compression point compression point (dbm) frequency (ghz) -70 -60 -50 -40 -30 -20 -10 0 012345678910 isolation (db) frequency (ghz) isolation between output ports HMC322 v01.0907 gaas mmic sp8t non-reflective switch, dc - 10 ghz
switches - chip 4 4 - 16 for price, delivery, and to place orders, please contact hittite microwave corporation: 20 alpha road, chelmsford, ma 01824 phone: 978-250-3343 fax: 978-250-3373 order on-line at www.hittite.com truth table bias voltage & current control voltages control input signal path state abc rfcom to: high high high rf1 low high high rf2 high low high rf3 low low high rf4 high high low rf5 low high low rf6 high low low rf7 low low low rf8 vee range = -5 vdc 10% vee (vdc) iee (typ.) (ma) iee (max.) (ma) -5.0 5.0 9.0 state bias condition low -3v to 0 vdc @ 25 ua typical high -5 to -4.2 vdc @ 5 ua typical absolute maximum ratings bias voltage range (vee) -7 vdc control voltage range (a, b, & c) vee -0.5v to +1 vdc storage temperature -65 to +150 c operating temperature -40 to +85 c rf input power, 0.5 - 10 ghz +26 dbm electrostatic sensitive device observe handling precautions HMC322 v01.0907 gaas mmic sp8t non-reflective switch, dc - 10 ghz
switches - chip 4 4 - 17 for price, delivery, and to place orders, please contact hittite microwave corporation: 20 alpha road, chelmsford, ma 01824 phone: 978-250-3343 fax: 978-250-3373 order on-line at www.hittite.com outline drawing notes: 1. dimensions in inches [millimeters]. 2. die thickness is 0.004. 3. typical bond pad is 0.004 square. 4. typical bond pad spacing is 0.006 center to center. 5. bond pad metallization: gold. 6. backside metallization: gold. 7. backside metal is ground. 8. no connection required for unlabeled ground bond pads. die packaging information [1] standard alternate wp-3 (waffle pack) [2] [1] refer to the packaging information section for die packaging dimensions. [2] for alternate packaging information contact hittite microwave corporation. HMC322 v01.0907 gaas mmic sp8t non-reflective switch, dc - 10 ghz
switches - chip 4 4 - 18 for price, delivery, and to place orders, please contact hittite microwave corporation: 20 alpha road, chelmsford, ma 01824 phone: 978-250-3343 fax: 978-250-3373 order on-line at www.hittite.com pad number function description interface schematic 1 - 7, 12 - 14 rf1, rfc, rf8 - rf2 these pads are dc coupled and matched to 50 ohms. block- ing capacitors are required if rf line potential is not equal to 0v. 8 a see truth table and control voltage table. 9 b see truth table and control voltage table. 10 c see truth table and control voltage table. 11 vee supply voltage = -5vdc 10% die bottom gnd die bottom must be connected to rf / dc ground. ttl interface circuit (required for each control input a, b and c) note: control inputs a, b, and c can be driven directly with ttl logic with -5 volts applied to the hct logic gates vee pin and to the vee pad of the rf switch. pad descriptions HMC322 v01.0907 gaas mmic sp8t non-reflective switch, dc - 10 ghz
switches - chip 4 4 - 19 for price, delivery, and to place orders, please contact hittite microwave corporation: 20 alpha road, chelmsford, ma 01824 phone: 978-250-3343 fax: 978-250-3373 order on-line at www.hittite.com assembly diagram handling precautions follow these precautions to avoid permanent damage. storage: all bare die are placed in either waffle or gel based esd protective containers, and then sealed in an esd protective bag for shipment. once the sealed esd protective bag has been opened, all die should be stored in a dry nitrogen environment. cleanliness: handle the chips in a clean environment. do not attempt to clean the chip using liquid cleaning systems. static sensitivity: follow esd precautions to protect against esd strikes. transients: suppress instrument and bias supply transients while bias is applied. use shielded signal and bias cables to minimize inductive pick-up. general handling: handle the chip along the edges with a vacuum collet or with a sharp pair of bent tweezers. the surface of the chip has fragile air bridges and should not be touched with vacuum collet, tweezers, or ngers. mounting the chip is back-metallized and can be die mounted with electrically conductive epoxy. the mounting surface should be clean and at. epoxy die attach: apply a minimum amount of epoxy to the mounting surface so that a thin epoxy llet is observed around the perimeter of the chip once it is placed into position. cure epoxy per the manufacturers schedule. wire bonding ball or wedge bond with 0.025mm (1 mil) diameter pure gold wire. thermosonic wirebonding with a nominal stage temperature of 150 deg. c and a ball bonding force of 40 to 50 grams or wedge bonding force of 18 to 22 grams is recommended. use the minimum level of ultrasonic energy to achieve reliable wirebonds. wirebonds should be started on the chip and terminated on the package or substrate. all bonds should be as short as possible <0.31mm (12 mils). HMC322 v01.0907 gaas mmic sp8t non-reflective switch, dc - 10 ghz
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